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GD25Q64ESIGR: Datasheet, Specs, Pinout & Reference

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GD25Q64ESIGR Datasheet and Specs

GD25Q64ESIGR Package and Pinout Reference

The GD25Q64ESIGR is a versatile 64M-bit (8M-byte) Serial Flash memory device from GigaDevice, engineered to deliver top-tier performance for applications requiring advanced SPI (Serial Peripheral Interface) configurations, including Dual and Quad I/O. Housed in a standardized 8-SOIC package, it is a go-to solution for embedded engineers designing high-speed data logging, microcontroller code shadowing, and Execute-in-Place (XIP) architectures. Its balance of robust data retention, high clock frequency, and comprehensive security features makes it an industry standard across consumer electronics and industrial automation.

1. Overview and Core Features

Operating gracefully on a single 2.7V to 3.6V power supply, the GD25Q64ESIGR is built for speed. In Fast Read mode, it supports clock frequencies up to 133MHz. When configured for Quad SPI, this effective data rate climbs to an impressive 532MHz, significantly mitigating memory access bottlenecks in high-performance computing tasks. Key attributes include:

  • Density: 64M-bit (8M-byte) divided into uniform 4KB sectors.
  • Communication: Standard SPI, Dual SPI, and Quad SPI for enhanced data throughput.
  • Speed: 133MHz maximum clock frequency.
  • Durability: Guaranteed 100,000 Program/Erase cycles per sector, with data retention exceeding 20 years.
  • Data Security: Sophisticated hardware/software write protections and multiple One-Time Programmable (OTP) security registers.
  • Form Factor: Industry-standard 8-pin SOP (208mil), simplifying PCB layout and minimizing required board space.

2. Specifications and Parameter Table

Parameter Value
Manufacturer GigaDevice
Memory Size 64 Mbit (8 MB)
Memory Interface SPI, Dual SPI, Quad SPI
Clock Frequency Up to 133 MHz
Supply Voltage 2.7V ~ 3.6V
Package / Case 8-SOIC (0.209", 5.30mm Width)
Operating Temperature -40°C ~ 85°C (Industrial)
Standby Current 1 µA (Deep Power-Down, Typ.)

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3. Architecture and Block Diagram

Internally, the GD25Q64ESIGR utilizes a highly organized memory array broken down into 128 erasable blocks (64KB each), which are further divided into 16 sectors per block (4KB each). This granular structure allows for precise memory management and reduces wear during localized updates. The 256-byte page programming buffer ensures rapid data writes. The chip interfaces with host controllers via standard SPI signals (CS#, CLK, SI, SO), while Quad SPI implementations utilize IO2 and IO3 (which double as Write Protect and Hold pins in standard mode) to multiplex data, maximizing bandwidth efficiency without increasing pin count.

4. Video: Feature Breakdown

5. Equivalents, Cross-Reference, and Lifecycle

The GD25Q64ESIGR is a mature, widely available part with strong manufacturer support. Because it strictly adheres to JEDEC standards for 8-pin SOP SPI flash memory, it is pin-for-pin and command-compatible with multiple competitor ICs. Prominent equivalents include the Winbond W25Q64JVSIQ and Macronix MX25L6433FM2I-08G. While core read/write/erase commands are universally identical, engineers should verify specifics regarding security register formats and device ID validation during cross-qualification processes.

6. Frequently Asked Questions (FAQ)

What happens to the Write Protect (WP#) pin during Quad SPI operation?

In standard or Dual SPI modes, the WP# pin functions as a hardware write protect. However, when the device is configured into Quad SPI mode (by setting the QE bit in the Status Register), the WP# pin is multiplexed and functions as the IO2 bidirectional data line.

How long does it take to erase a 4KB sector on the GD25Q64ESIGR?

Typical sector erase time (4KB) is around 45ms to 50ms, though this can vary slightly based on operating temperature and supply voltage. The full chip erase operation typically completes within 25 seconds.

Is the GD25Q64ESIGR suitable for low-power applications?

Yes, while it draws around 12mA to 20mA during active read/program cycles, it drops to approximately 1µA when placed in Deep Power-Down mode, making it exceptionally well-suited for battery-powered or energy-harvesting applications.


AC

Alan Carter, Senior Hardware Engineer

Alan has over 15 years of experience in embedded systems design, specializing in ARM Cortex architectures, PCB routing for high-speed digital signals, and industrial IoT deployments. He frequently contributes technical teardowns and architecture comparisons.

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