MT41K256M16TW-107:P Datasheet, Pinout, Equivalents, and Specs

The MT41K256M16TW-107:P is a high-density 4Gb DDR3L Synchronous Dynamic RAM (SDRAM) component manufactured by Micron Technology. Organized as 256 Meg words x 16 bits, it operates at a low voltage of 1.35V, making it suitable for power-sensitive applications. As a mature but widely integrated component, it serves as a primary memory solution in embedded computing, networking infrastructure, and industrial systems that require high data throughput and reliability.

What is the MT41K256M16TW-107:P?

The MT41K256M16TW-107:P is a high-speed CMOS, dynamic random-access memory engineered using Micron's advanced process technology. Its internal architecture consists of eight banks, enabling concurrent operations that maximize memory bandwidth. This device is designed for systems that require high memory throughput, low power consumption, and high density in a compact form factor. The "-107" speed grade specifies a clock cycle time of 1.071ns, corresponding to a DDR3-1866 data rate. Its industrial temperature range (-40°C to 95°C) makes it robust for deployment in harsh environmental conditions, targeting markets such as industrial automation, telecommunications, and enterprise-level computing hardware.

Pinout Configuration and Packaging

The MT41K256M16TW-107:P is supplied in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, designated by the "TW" in the part number. This package provides a high-density interconnect solution with excellent electrical performance and thermal dissipation characteristics. Critical I/O pins follow the JEDEC standard for x16 DDR3 components and include the data bus (DQ0-DQ15), address lines (A0-A14), bank address lines (BA0-BA2), clock inputs (CK, CK#), and command signals (RAS#, CAS#, WE#). Proper thermal management, often involving thermal vias under the package on the PCB, is essential to maintain junction temperatures within specified limits during high-speed operation.

Core Architectural Features

• High-Speed Data Rate: The -107 speed grade supports a data rate of 1866 MT/s (megatransfers per second) with a corresponding clock frequency of 933 MHz, enabling high-throughput data processing for demanding applications.
• Low-Voltage Operation (DDR3L): This component operates at a nominal VDD/VDDQ of 1.35V, reducing power consumption by up to 30% compared to standard 1.5V DDR3 devices. It maintains backward compatibility and can operate at 1.5V if required by the system controller.
• 8-Bank Internal Architecture: The device features eight internal memory banks, allowing for interleaved memory access. This architecture improves performance by hiding precharge and activation times, resulting in higher sustained bandwidth.
• Programmable On-Die Termination (ODT): Integrated, programmable ODT allows the device to match the impedance of the transmission lines on the PCB. This feature improves signal integrity by minimizing signal reflections, which is critical for stable operation at high frequencies.
• Configurable Timing Parameters: The device supports programmable CAS Latency (CL), CAS Write Latency (CWL), and Additive Latency (AL). It also features a fixed Burst Length (BL) of 8 and a selectable on-the-fly Burst Chop (BC) of 4 for optimized data transfers.

Specifications Parameter Table

MT41K256M16TW-107:P Equivalents, Cross Reference, and Lifecycle

The MT41K256M16TW-107:P is an active, mature component in Micron's portfolio. While widely available, procurement managers may face allocation or extended lead times for large volume orders. For systems requiring pin-compatible alternatives, several options exist. A potential drop-in replacement is Samsung's K4B4G1646E-BYMA or SK Hynix's H5TC4G63EFR-PBA. When considering these equivalents, engineers must verify that key parameters—density (4Gb), organization (x16), voltage (1.35V), speed grade (1866 MT/s or faster), and package (96-ball FBGA)—are identical. Pin-to-pin compatibility is generally high for JEDEC-compliant DDR3 components, but a thorough review of the respective datasheets is mandatory to confirm subtle timing or power differences before substitution.

Typical Application & Circuit Considerations

The MT41K256M16TW-107:P is typically implemented in systems with processors or FPGAs featuring a DDR3 memory controller. For reliable operation, PCB layout is critical. Power supply decoupling must be implemented with low-ESR ceramic capacitors (e.g., 0.1μF) placed as close as possible to each VDD and VDDQ ball, supplemented by bulk capacitance (e.g., 10μF) for the power plane. Signal integrity requires controlled impedance traces (typically 40-50Ω single-ended) for all data, address, command, and clock lines. Trace lengths for signals within a byte group and for the clock/command/address bus must be precisely matched to prevent timing skew, which can cause data errors at high operational speeds.

Video Demonstration

Market Availability and Pricing Trends

As a mature DDR3 product, the supply chain for the MT41K256M16TW-107:P is generally stable, but can be influenced by shifts in demand for legacy components and fab capacity allocation. Lead times can vary, and buyers may encounter constraints for high-volume orders or specific date codes. To check real-time stock, pricing, or to request a quote for the MT41K256M16TW-107:P and its verified alternatives, upload your BOM to WWDParts for fast processing.

Alan Carter

Senior Hardware Engineer & Component Specialist

Alan has over 15 years of expertise in embedded systems design, FPGA architecture, and global semiconductor supply chains. He specializes in component cross-referencing, lifecycle management, and helping OEMs navigate supply shortages.