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K4UBE3D4AB-MGCL Package and Pinout Reference
The K4UBE3D4AB-MGCL from Samsung is a highly advanced 32Gb (Gigabit) LPDDR4X (Low Power Double Data Rate 4X) DRAM module. Engineered for optimal performance in ultra-low-power embedded systems, this memory IC delivers impressive bandwidth suitable for mobile platforms, automotive infotainment systems, and high-performance tablets. By operating at reduced voltages compared to standard LPDDR4 modules, the K4UBE3D4AB-MGCL strikes a vital balance between thermal dissipation, energy retention, and data processing speed.
Table of Contents
1. Overview and Core Features
As part of Samsung's flagship LPDDR4X lineup, the K4UBE3D4AB-MGCL is built using a state-of-the-art semiconductor process ensuring maximized integration density within an FBGA package. The core benefits include a notable VDDQ voltage drop (down to 0.6V), which vastly reduces I/O power consumption when transferring data. Its multi-channel architecture facilitates simultaneous data access streams, drastically cutting latency during heavy multi-tasking workloads in modern SoCs (System-on-Chips).
2. Specifications and Parameter Table
| Parameter | Value |
|---|---|
| Manufacturer | Samsung |
| Capacity | 32 Gb (Gigabits) |
| Memory Type | LPDDR4X SDRAM |
| VDD / VDDQ Voltage | 1.1V / 0.6V |
| Data Rate | Up to 4266 Mbps |
| Package | FBGA |
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Check K4UBE3D4AB-MGCL Stock3. Architecture and Block Diagram
The K4UBE3D4AB-MGCL employs a multi-bank architecture natively compatible with advanced ARM and x86 mobile processors. The split internal datapath allows for pipelined command execution, effectively keeping the memory bus saturated with meaningful payloads while mitigating the bottleneck of consecutive row activations.
4. Video: Feature Breakdown
5. Equivalents, Cross-Reference, and Lifecycle
Samsung guarantees a stable production lifecycle for the K4UBE3D4AB-MGCL, ensuring its viability in long-term industrial and commercial designs. For direct equivalents, engineers should explore similar 32Gb LPDDR4X modules from Micron and SK Hynix, being careful to match the VDDQ rail requirements and physical FBGA ball pitch mapped in their layout.
6. Frequently Asked Questions (FAQ)
What is the capacity of the K4UBE3D4AB-MGCL?
The K4UBE3D4AB-MGCL has a capacity of 32 Gigabits.
What is the primary difference between LPDDR4 and LPDDR4X?
LPDDR4X operates with a significantly lower I/O voltage (VDDQ of 0.6V compared to 1.1V in standard LPDDR4), yielding substantial power savings in data-heavy mobile applications.
Alan Carter, Senior Hardware Engineer
Alan has over 15 years of experience in embedded systems design, specializing in ARM Cortex architectures, PCB routing for high-speed digital signals, and industrial IoT deployments. He frequently contributes technical teardowns and architecture comparisons.
